DocumentCode
3156773
Title
Device Simulation on Gate-All-Around Cylindrical Transistor
Author
Xiao, Deyuan ; Wang, Xi ; Chen, Jing ; Huang, Xiaolu ; Luo, Jiexin ; Wu, Qingqing
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Volume
2
fYear
2010
fDate
12-14 Nov. 2010
Firstpage
160
Lastpage
163
Abstract
In this paper, we reported TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10 nm scaling. The GAAC transistor device physics, TCAD simulation have been discussed. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability.
Keywords
MOSFET; semiconductor device models; technology CAD (electronics); FinFET devices; TCAD; device simulation; gate-all-around cylindrical transistor; size 10 nm; Doping; FinFETs; Logic gates; Mathematical model; Performance evaluation; Silicon; Device physics; Gate-all-around cylindrical transistor; TCAD Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
System Science, Engineering Design and Manufacturing Informatization (ICSEM), 2010 International Conference on
Conference_Location
Yichang
Print_ISBN
978-1-4244-8664-9
Type
conf
DOI
10.1109/ICSEM.2010.131
Filename
5640251
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