An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications

Author

Ghazinour, Akbar ; Wennekers, Peter ; Reuter, Ralf ; Yi, Yin ; Li, Hao ; Bohm, Thomas ; Jahn, Danny

Author_Institution

RF/IF Innovation Center-TSO-EMEA, Freescale Semicond., Munich

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

194

Lastpage

197

Abstract

This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices

Keywords

BiCMOS integrated circuits; CW radar; FM radar; Ge-Si alloys; frequency dividers; system-on-chip; voltage-controlled oscillators; 0.18 micron; 100 kHz; 77 GHz; 77 GHz applications; FMCW radar system; SiGe; SiGe BiCMOS; frequency divider; low noise transmitter chip; push-pull voltage controlled oscillator; Detectors; Frequency conversion; Integrated circuit measurements; Power generation; Power measurement; Radar detection; Semiconductor device measurement; Semiconductor device noise; Transmitters; Voltage-controlled oscillators; 77 GHz; 77 GHz FMCW radar system; SiGe-BiCMOS; Transmitter; VCO; frequency divider;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282785

Filename

4057608