Abstract :
HBTs show much better performance compared to their BJT predecessors, but also require enhanced models for reliable circuit design. This talk addresses which enhancements are required and available in state-of-the-art models, namely, accounting for self-heating and bias-dependence of transit-time. Limitations of these models, and thus challenges for future modeling efforts, will also be addressed, like: modeling of large and packaged devices, noise modeling, operation in deep saturation, and operation at and beyond transit frequency.
