On-wafer wideband characterization of advanced MOS technologies

Author

Raskin, Jean-Pierre

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

225

Lastpage

228

Abstract

A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed

Keywords

MOSFET; equivalent circuits; semiconductor device models; semiconductor technology; silicon-on-insulator; MOS devices; MOS transistors; MOSFET; advanced MOS technologies; electrical equivalent circuit; frequency band analysis; on-wafer wideband characterization; silicon technology; silicon-on-insulator; wideband electrical characterization; wideband equivalent small-signal circuit; CMOS technology; Electrical resistance measurement; Frequency; Integrated circuit technology; MOSFETs; Microwave devices; Partial discharges; Tunneling; Voltage; Wideband; MOSFETs; On-wafer characterization; Silicon-on-Insulator; silicon technology; wideband electrical characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282793

Filename

4057616