DocumentCode
3157084
Title
A Compact 500-mW Ku-band Power Amplifier MMIC in 3×3-mm2 Quad Flat (QFN) Packages
Author
Bessemoulin, A. ; Suh, Y.H. ; Richardson, D. ; Mahon, S.J. ; Harvey, J.T.
Author_Institution
Mimix Broadband Inc., Houston, TX
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
229
Lastpage
232
Abstract
This paper presents the performance of a 0.5-Watt Ku-band power amplifier MMIC in low cost surface mount quad flat non-leaded packages (QFN). Depending on the technology used (molded or air-cavity QFN packages), the packaged 2-stage amplifier exhibits high-gain ranging from 18- to 20 dB at Ku-band, with more than 27-dBm (500-mW) CW output power, and up to 29-dBm in saturation (800 mW) at 13.75-14.5 GHz. With a die area of only 1.5 mm2 and QFN packages being 3 mm × 3 mm, these results represents the highest output power levels reported to date for amplifier MMICs packaged in the smallest outline
Keywords
III-V semiconductors; MMIC power amplifiers; gallium arsenide; surface mount technology; wide band gap semiconductors; 13.75 to 14.5 GHz; 18 to 20 dB; 500 mW; 800 mW; GaAs; Ku-band power amplifier MMIC; air-cavity QFN packages; molded QFN packages; quad flat nonleaded packages; surface mount packages; Assembly; Bonding; Ceramics; Costs; High power amplifiers; Integrated circuit packaging; MMICs; Packaging machines; Plastics; Power amplifiers; Ceramics; GaAs; MMIC; Power amplifiers; QFN; SMD; packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282794
Filename
4057617
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