3157240

First Egyptian Workshop on Advancements of Electronic Devices (EWAED) (IEEE Cat. No.02EX600)

2002

28-28 Sept. 2002

CMOS integrated circuits; MOS capacitors; SRAM chips; application specific integrated circuits; bipolar transistors; ferroelectric storage; nanoelectronics; radiation effects; radiation hardening (electronics); semiconductor device models; thyristor circuits; thyristors; BJT; CMOS ASIC radiation immunity device scaling effects; bipolar junction transistors; ferroelectric memories; generic object-oriented semiconductor device simulators; microthyristor based SRAM cells; single/dual-gate MITT nanometer transistors; total ionizing dose MOS capacitor radiation effects;

English

ieee

Electronic Devices, 2002. (EWAED). The First Egyptian Workshop on Advancements of

Cairo, Egypt

977-5031-73-7

conf

10.1109/EWAED.2002.1177873

1177873