Title :
Nonlinear modeling of compound semiconductor HEMTs, state of the art
Abstract :
Summary form only given. This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications.
Keywords :
high electron mobility transistors; microwave field effect transistors; semiconductor device models; compound semiconductor HEMT; compound semiconductor HFET modelling; microwave power; nonlinear modeling; HEMTs; MODFETs;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518285
