DocumentCode :
3157336
Title :
A new SRAM cell design using CNTFETs
Author :
Lin, Sheng ; Kim, Yong-Bin ; Lombardi, Fabrizio ; Lee, Young Jun
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA
Volume :
01
fYear :
2008
fDate :
24-25 Nov. 2008
Abstract :
As CMOS devices scales to the nano ranges, increased short channel effects and process variations considerably affect device and circuit designs. Novel devices are been proposed to address these problems. As a promising new transistor, the carbon nanotube field effect transistor (CNTFET) avoids most of the fundamental limitations of the traditional CMOS devices. In this paper, the MOSFET-like CNTFET is reviewed and shown as a promising device for high-performance and low-power memory designs. A 6T SRAM cell based on CNTFET is designed and simulated to show the improvements in stability, performance, and sensitivity on process variations compared to the CMOS 6T SRAM design.
Keywords :
CMOS integrated circuits; SRAM chips; carbon nanotubes; field effect transistors; nanotube devices; CMOS 6T SRAM design; CNTFET; carbon nanotube field effect transistor; short channel effects; stability; CMOS process; CMOS technology; CNTFETs; Carbon nanotubes; MOSFETs; Nanoscale devices; Random access memory; Semiconductivity; Silicon; Threshold voltage; Carbon Nanotube Field Effect Transistor; SRAM design; high performance; low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
Type :
conf
DOI :
10.1109/SOCDC.2008.4815599
Filename :
4815599
Link To Document :
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