An 8Ã\x978 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems

Author

Kamitsuna, Hideki ; Yamane, Yasuro ; Tokumitsu, Masami ; Sugahara, Hirohiko ; Enoki, Takatomo

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

281

Lastpage

284

Abstract

An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm² (core area) and achieves low insertion loss (<3.9 dB) and high isolation (>26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MMIC; field effect transistor switches; indium compounds; microwave switches; 10 Gbit/s; 5 micron; HEMT; InP; field effect transistor switches; high electron mobility transistors; switch matrix MMIC; Dielectrics; HEMTs; Indium phosphide; Isolation technology; MMICs; MODFETs; Nonhomogeneous media; Switches; Transmission line matrix methods; Wideband; FET switches; InP HEMT; MMIC switches; switch matrix; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282807

Filename

4057630