Title :
Recent research on ferroelectric memories
Author_Institution :
Dept. of Electron. & Commun. Eng., Cairo Univ., Giza, Egypt
Abstract :
Summary form only given. With a memory-cell size comparable to that of a DRAM memory cell and a manufacturing process similar to that of a stacked high-density DRAM, it can be expected that ferroelectric memories will be soon introduced in the market. The objective here is to summarize some of the recent research effort in this important area. Research on ferroelectric memories is proceeding on three fronts: material processing, modeling and circuit design. We briefly discuss all these activities.
Keywords :
ferroelectric materials; ferroelectric storage; integrated circuit design; integrated circuit modelling; integrated memory circuits; random-access storage; DRAM memory cells; ferroelectric memories; ferroelectric memory material processing/modeling/circuit design; memory-cell size; stacked high-density DRAM manufacturing process; Circuit synthesis; Consumer electronics; Ferroelectric materials; Manufacturing processes; Materials processing; Random access memory;
Conference_Titel :
Electronic Devices, 2002. (EWAED). The First Egyptian Workshop on Advancements of
Print_ISBN :
977-5031-73-7
DOI :
10.1109/EWAED.2002.1177880
