Experimental study of total ionizing dose radiation effects on MOS capacitor

Author

Sharashar, Karam ; Kayed, Somaya

Author_Institution

Nat. Center for Radiat. Res. & Technol., Cairo, Egypt

fYear

2002

fDate

28 Sept. 2002

Firstpage

88

Lastpage

91

Abstract

The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor wafer samples that are locally fabricated for this purpose. The oxide was prepared by a dry-wet-dry oxidation technique at 1000°C using an N-type Si substrate of about 3 Ω/cm. The samples have been exposed to irradiation at different doses from 1 krad(SiO₂) up to 1 Mrad(SiO₂) using two different gamma sources for high and low radiation rates. A shift in C-V curves, as a flat-band, shifted from 0.3 up to 2.5 V and interface states of irradiated samples increased from 2.45×10¹² up to 250×10¹² eV^-1 cm^-2. Shelf annealing effects have also been investigated.

Keywords

MOS capacitors; annealing; capacitance; gamma-ray effects; interface states; oxidation; semiconductor device testing; 0.3 to 2.5 V; 1 krad to 1 Mrad; 1000 C; MOS capacitor total ionizing dose radiation effects; MOS capacitor wafer samples; N-type Si substrates; Si-SiO₂; TID; flat-band C-V curve shift; gamma source irradiation doses; high/low radiation rates; interface states; oxide dry-wet-dry oxidation techniques; shelf annealing effects; Annealing; Capacitance-voltage characteristics; Interface states; MOS capacitors; Oxidation; Radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, 2002. (EWAED). The First Egyptian Workshop on Advancements of

Print_ISBN

977-5031-73-7

Type

conf

DOI

10.1109/EWAED.2002.1177881

Filename

1177881