DocumentCode
3157414
Title
A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD
Author
Gatard, Emmanuel ; Bouysse, Philippe ; Sommet, Raphaël ; Quéré, Raymond ; Bureau, Jean-Marc ; Ledieu, Pascal ; Stanislawiak, Michel ; Tolant, Clément
Author_Institution
XLIM CNRS IUT GEII, Brive la Gaillarde
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
285
Lastpage
288
Abstract
A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results
Keywords
CAD; carrier lifetime; microwave diodes; p-i-n diodes; CAD; carrier lifetime; design automation; forward bias; microwave p-i-n diode; nonlinear model; Analytical models; Charge carrier lifetime; Charge carrier processes; Circuit simulation; Impedance; Integrated circuit modeling; Microwave frequencies; P-i-n diodes; Radio frequency; Spontaneous emission; Carrier lifetime; design automation; forward bias; modeling; p-i-n diode;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282808
Filename
4057631
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