Title :
New drain current model for MESFET/HEMT devices based on pulsed measurements
Author :
Rafael-Valdivia, Guillermo ; Brady, Ronan ; Brazil, Thomas J.
Author_Institution :
Sch. of Electr., Electron. & Mech. Eng., Univ. Coll. Dublin
Abstract :
In this work, a new Ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; semiconductor device models; DC measurement; HEMT devices; Ids current equation; MESFET device; drain current model; low-high power transistors; microwave devices; pulsed measurements; scattering parameter measurement; Current measurement; Equations; HEMTs; Integrated circuit modeling; Intrusion detection; MESFETs; Microwave measurements; Pulse circuits; Pulse measurements; Voltage; Circuit modeling; FET circuits; MESFETs; microwave devices; pulsed measurements; scattering parameter measurement;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282809
