Solar cells with efficiencies above 21% processed from Czochralski grown silicon

Author

Knobloch, J. ; Glunz, S.W. ; Biro, D. ; Warta, W. ; Schäffer, E. ; Wettling, W.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany

fYear

1996

fDate

13-17 May 1996

Firstpage

405

Lastpage

408

Abstract

Czochralski-Si (Cz-Si) of several manufacturers and with resistivities ranging from 1 to 13 Ωcm were processed into solar cells with efficiencies higher than 20% (AM1.5) using the LBSF/PERL processing sequence. The highest efficiency was 21.7%. The investigation of high efficiency Cz-Si solar cells was augmented by computer simulation and a study of the carrier lifetime before and after processing. A small degradation of solar cell performance in the lower resistivity material is discussed. Furthermore, a much simpler processing sequence is presented revealing efficiencies well above 19% on Cz-silicon and 21% on float zone-silicon

Keywords

carrier lifetime; crystal growth from melt; electronic engineering computing; elemental semiconductors; semiconductor device models; semiconductor device testing; semiconductor growth; silicon; solar cells; 1 to 13 ohmcm; 21.7 percent; Czochralski-grown silicon; LBSF/PERL processing sequence; PV performance; Si; carrier lifetime; computer simulation; material resistivity; solar cells; Boron; Charge carrier lifetime; Computer simulation; Conductivity; Manufacturing processes; Photovoltaic cells; Production; Silicon; Solar energy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564029

Filename

564029