DocumentCode :
3157530
Title :
High power symmetrical GCT for current source inverter
Author :
Satoh, K. ; Yamamoto, M. ; Morishita, K. ; Yamaguchi, Y. ; Iwamoto, H.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
877
Abstract :
GCT (gate commutated turn-off thyristor) is a new high power device with snubberless turn-off operation which was developed in the mid-1990s, and is growing up to be the main device instead of GTO (gate turn-off thyristor) for high power application. For PWM current source inverters used in AC drive, symmetrical GCT with reverse blocking characteristics are expected. However, the symmetrical structure generally gives smaller turn-off capability compared with asymmetrical GCT, which has already been developed. This paper presents new GCT technologies, characteristics of 6 kV/4 kA symmetrical GCT and comparison of loss between current source inverter and voltage source inverter by using GCT
Keywords :
commutation; invertors; thyristor convertors; 4 kA; 6 kV; AC drive; PWM current source inverters; current source inverter loss; gate commutated turn-off thyristor; high power device; high power symmetrical GCT; reverse blocking; snubberless turn-off operation; symmetrical structure; voltage source inverter loss; Capacitance; Cathodes; Circuits; Inductance; MOSFETs; Packaging; Pulse width modulation; Pulse width modulation inverters; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
Type :
conf
DOI :
10.1109/PEDS.1999.792822
Filename :
792822
Link To Document :
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