DocumentCode :
3157548
Title :
Dispersion of Linearity in Broadband FET Circuits
Author :
Parker, Anthony E. ; Rathmell, James G.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
320
Lastpage :
323
Abstract :
A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodulation across wide bandwidths due to trapping and heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. This is important for meeting legislative requirements or for designing for good spurious-free dynamic range, and for improving the performance of linearization techniques where band-limiting of optimal linear conditions may occur
Keywords :
impact ionisation; intermodulation; microwave field effect transistors; FET amplifiers; charge trapping; field effect transistors; impact ionization; memory effects; microwave FET circuits; Bandwidth; Broadband amplifiers; Dispersion; FET circuits; Frequency dependence; Frequency measurement; Heating; Linearity; Signal design; Testing; Charge trapping; Impact ionization; Inter-modulation; Kink effect; Memory effect; Microwave FET; Self heating; Transistor modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282817
Filename :
4057640
Link To Document :
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