• DocumentCode
    3157548
  • Title

    Dispersion of Linearity in Broadband FET Circuits

  • Author

    Parker, Anthony E. ; Rathmell, James G.

  • Author_Institution
    Dept. of Electron., Macquarie Univ., Sydney, NSW
  • fYear
    2006
  • fDate
    10-13 Sept. 2006
  • Firstpage
    320
  • Lastpage
    323
  • Abstract
    A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodulation across wide bandwidths due to trapping and heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. This is important for meeting legislative requirements or for designing for good spurious-free dynamic range, and for improving the performance of linearization techniques where band-limiting of optimal linear conditions may occur
  • Keywords
    impact ionisation; intermodulation; microwave field effect transistors; FET amplifiers; charge trapping; field effect transistors; impact ionization; memory effects; microwave FET circuits; Bandwidth; Broadband amplifiers; Dispersion; FET circuits; Frequency dependence; Frequency measurement; Heating; Linearity; Signal design; Testing; Charge trapping; Impact ionization; Inter-modulation; Kink effect; Memory effect; Microwave FET; Self heating; Transistor modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Microwave Integrated Circuits Conference, 2006. The 1st
  • Conference_Location
    Manchester
  • Print_ISBN
    2-9600551-8-7
  • Type

    conf

  • DOI
    10.1109/EMICC.2006.282817
  • Filename
    4057640