DocumentCode :
3157649
Title :
Preparation and characterization of manganese doped lead titanate films by sol-gel techniques
Author :
Tandon, R.P. ; Raman, V. ; Singh, Ramadhar ; Narula, Amarjeet K.
Author_Institution :
Nat. Phys. Lab., New Delhi, India
fYear :
1991
fDate :
33457
Firstpage :
443
Lastpage :
445
Abstract :
In the present investigation, sol-gel method has been adopted to make manganese doped lead titanate (PT) films with perovskite structure by reacting liquid precursors to form a sol. The films were deposited on stainless steel substrate by multilayer spin coating using technique. The films were then annealed at temperatures close to 550°C. The films were crack free and the ferroelectric behavior was established by studying their hysteresis loop measurements. Dielectric constant was found to be around 300 and coercive field was greater than 60 kv/cm for films with finer grain sizes. The films fired at 550°C exhibited remanent polarization values close to 25 micro-coulomb/cm2
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric thin films; grain size; lead compounds; manganese; permittivity; sol-gel processing; 550 C; PbTiO3:Mn; annealed; coercive field; crack free; dielectric constant; ferroelectric behavior; finer grain sizes; hysteresis loop; multilayer spin coating; perovskite structure; remanent polarization; sol-gel method; sol-gel techniques; stainless steel substrate; Annealing; Coatings; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Manganese; Nonhomogeneous media; Steel; Temperature; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
Type :
conf
DOI :
10.1109/ISAF.1994.522397
Filename :
522397
Link To Document :
بازگشت