Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K

Author

Matiss, A. ; Brockerhoff, W. ; Poloczek, A. ; Prost, W. ; Tegude, F.-J.

Author_Institution

Dept. of Solid State Electron., Univ. of Duisburg-Essen, Duisburg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

344

Lastpage

347

Abstract

The influence of temperature on bias dependent small-signal equivalent circuit components of a resonant tunneling diode (RTD) is investigated from 290 K down to 15 K. The RTD model based on bias dependent parasitic elements and the quantum capacitance as well as the quantum conductance is fitted to both, on-wafer DC and RF S-parameter measurements from 45 MHz to 40 GHz over a bias range of 0 V to 0.80 V. For the full temperature range, good agreement between extracted and measured parameters is shown

Keywords

III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device models; 0 to 0.80 V; 15 to 290 K; 45 MHz to 40 GHz; InGaAs-InAlAs; RF measurement; S-parameter measurements; equivalent circuits; parameter extraction; quantum capacitance; quantum conductance; resonant tunneling diodes; Capacitance measurement; Diodes; Equivalent circuits; Parasitic capacitance; Quantum capacitance; Radio frequency; Resonant tunneling devices; Scattering parameters; Temperature dependence; Temperature distribution; low-temperature; modeling; parameter extraction; resonant tunneling diode;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282652

Filename

4057646