Mixed-Mode Modeling and Parameter Extraction of Advanced InGaAs HBTs in RFIC Systems

Author

Tseng, Hsien-cheng

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

356

Lastpage

359

Abstract

Mixed-mode modeling is originally demonstrated for parameter extraction of advanced InGaAs HBTs in RFIC systems. This efficient approach combines the genetic algorithm (GA) with succinct analytical formulae to determine physically meaningful circuit elements used in the SPICE-like simulator. Evaluation of simulated and analytically-derived values validates the accuracy of this methodology

Keywords

III-V semiconductors; bipolar transistor circuits; gallium arsenide; genetic algorithms; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; mixed analogue-digital integrated circuits; parameter estimation; radiofrequency integrated circuits; HBT; InGaAs; RFIC systems; SPICE simulator; genetic algorithm; mixed-mode modeling; parameter extraction; Biological cells; Circuit simulation; Cost function; Genetic algorithms; Genetic mutations; Indium gallium arsenide; Parameter extraction; Parasitic capacitance; Radiofrequency integrated circuits; Scattering parameters; Genetic algorithm; InGaAs HBTs; RFIC; mixed-mode modeling; parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282655

Filename

4057649