Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

Author

Benbakhti, B. ; Rousseau, M. ; De Jaeger, J.C.

Author_Institution

Inst. d´´Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

363

Lastpage

366

Abstract

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; hydrodynamics; power HEMT; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; 2D hydrodynamic model; AlGaN-GaN; breakdown voltage; field plate HEMT; field plate electrode; field plate high electron mobility transistor; microwave power performance; parasitic capacitances; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Hydrodynamics; MODFETs; Microwave devices; Microwave transistors; Poisson equations; Topology; AlGaN/GaN HEMTs; Field Plate; Hydrodynamic Model;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282657

Filename

4057651