Title :
Effects of sol-gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors
Author :
Kneer, E.A. ; Birnie, D.P., III ; Teowee, G. ; Podlesny, J.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Sol-gel derived lead zirconate titanate (PZT) films were deposited and crystallized on platinized Si/SiO2 and Al2O 3 wafer substrates in the film thickness range of 500-7000 Å. Electrical testing was conducted to evaluate the effect of PZT film thickness on capacitor performance. Optical microscopy and AFM data were used to identify factors which might cause shorting in crystallized PZT films. Thin films of Ti or TiOx were used for Pt bottom and top electrode adhesion in the substrate/Pt/PZT/Pt structured device. The effect of these adhesion layers has been investigated for several electrode composites. The fatigue behavior of these devices has been analyzed and compared
Keywords :
adhesion; atomic force microscopy; ferroelectric capacitors; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lead compounds; optical microscopy; piezoceramics; sol-gel processing; thin film capacitors; 500 to 7000 A; Al2O3; PZT; PbZrO3TiO3; Pt/PZT/Pt capacitors; Si-SiO2; electrical behavior; electrical testing; electrode structure; fatigue behavior; film thickness; optical microscopy; platinized Al2O3 wafer substrates; platinized Si/SiO2 wafer substrates; sol-gel PZT film; top electrode adhesion; Adhesives; Conductive films; Crystallization; Electrodes; Optical films; Optical microscopy; Semiconductor films; Substrates; Testing; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522398
