Title :
Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater
Author :
Nakao, Yuichi ; Nakamura, Takashi ; Kamisawa, AKira ; Takasu, Hidemi ; Soyama, Nobuyuki ; Sasaki, Go ; Atsuki, Tsutomu ; Yonezawa, Tadashi ; Ogi, Katsumi
Author_Institution :
Rohm Co. Ltd., Kyoto, Japan
Abstract :
The photo sensitivity of sol-gel solution of PbZrxTi 1-xO3 (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO2/SiO2/Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm2 of exposure was required to obtain the micro patterns. The film was finally annealed at 700°C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed Pr of 16.6 μC/cm2 and Ec of 38.8 kV/cm. After 1×10 12 cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; photochemistry; piezoceramics; rapid thermal annealing; sol-gel processing; 1-transistor-type ferroelectric memory; 2-methoxyethanol diluted with isopropyl alcohol; 60 s; 700 C; Ir-IrO2-SiO2-Si; PZT; PZT thin films; PbZrxTi1-xO3; PbZrO3TiO3; Si; annealed; coated film; half-micron patterns; metal-ferroelectric-metal-insulator-semiconductor structure; micro patterns; photo sensitivity; photo-sensitive water-generater; rapid thermal annealing; remanent polarization; sol-gel solution; Annealing; Ferroelectric films; Ferroelectric materials; Optical materials; Random access memory; Scanning electron microscopy; Semiconductor thin films; Substrates; Thin film sensors; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522399
