A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

Author

Alimenti, F. ; Borgarino, M. ; Codeluppi, R. ; Palazzari, V. ; Pifferi, M. ; Roselli, L. ; Scorzoni, A. ; Fantini, F.

Author_Institution

Dept. of Electron. & Inf. Eng., Perugia Univ.

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

379

Lastpage

382

Abstract

This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave integrated circuits; printed circuits; radio transmitters; silicon; wireless LAN; 0.35 micron; 14 dB; 5 GHz; FR4 printed circuit board; Si-SiGe; Si/SiGe BiCMOS technology; WLAN heterodyne transmitter; domotic applications; input referred compression point; third-order input intercept point; BiCMOS integrated circuits; Costs; Gain measurement; Germanium silicon alloys; Integrated circuit measurements; Printed circuits; Prototypes; Silicon germanium; Transmitters; Wireless LAN; BiCMOS; RFIC; WLAN; domotic applications;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282661

Filename

4057655