Title :
Paraelectric properties of PLT(28) reactively sputtered by multi-element metal target
Author :
Kim, H.H. ; Sohn, K.S. ; Casas, Luis Manuel ; Pfeffer, R.L. ; Lareau, R.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750°C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO2/Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 μC/cm2 and the lowest leakage current density was 0.1 μA/cm2
Keywords :
DRAM chips; ULSI; annealing; dielectric losses; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; sputter deposition; 200 nm; 450 to 750 degC; PbLaTiO3-Pt; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si multilayer substrate; ULSI DRAM; charge storage density; dielectric constant; dissipation factor; leakage current density; multi-element metal target; paraelectric film; planar capacitor; post-deposition annealing; reactive DC magnetron sputtering; thin films; Annealing; Capacitors; Dielectric substrates; Dielectric thin films; Lanthanum; Random access memory; Sputtering; Temperature distribution; Titanium compounds; Ultra large scale integration;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522405
