DocumentCode
3158004
Title
Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices
Author
white, Paul M. ; Stiebler, Wolfram C. ; Balas, Philip C.
Author_Institution
Raytheon RF Components, Andover, MA
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
414
Lastpage
416
Abstract
An improved modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to be properly simulated by adjusting a single parameter. The improved formulation is based on including the built-in potential in the definition of gate bias. The model is validated experimentally using data from a production PHEMT process
Keywords
high electron mobility transistors; PHEMT devices; PHEMT production process; gate bias; modified Materka model; pinch-off variation; Circuit simulation; Equations; Integrated circuit modeling; Intrusion detection; Microwave devices; Microwave integrated circuits; PHEMTs; Production; Radio frequency; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282670
Filename
4057664
Link To Document