Title :
Preparation of Bi4Ti3O12 thin films by reactive magnetron sputtering using metal target and their evaluations
Author :
Yamamoto, Takashi ; Matsuoka, Hiroyuki
Author_Institution :
Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan
Abstract :
As sputtered ferroelectric and (001) oriented Bi4Ti3O12 thin films were prepared on a Pt/Ti/SiO2/Si substrate at a comparatively low temperature around 330 °C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar+ and O2 and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm2 and 51.2 kV/cm, respectively
Keywords :
bismuth compounds; dielectric polarisation; ferroelectric thin films; permittivity; sputter deposition; 1 kHz; 330 degC; Bi4Ti3O12; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrate; chemical composition; coercive field; dielectric constant; ferroelectric films; oriented films; reactive magnetron sputtering; remanent polarization; thin films; Argon; Bismuth; Chemicals; Dielectric constant; Ferroelectric materials; Polarization; Semiconductor thin films; Sputtering; Substrates; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522409
