Detailed Analysis of IMD of HBT PA Based on VBIC Model

Author

Aikio, Janne P. ; Vuolevi, Joel ; Rahkonen, Timo

Author_Institution

Dept. of Electr. & Inf. Eng. & Infotech Oulu, Oulu Univ.

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

445

Lastpage

448

Abstract

In this paper a recently proposed detailed distortion analysis technique is extended to apply in a rather complex VBIC model that contains multidimensional current and charge models. The technique is implemented on top of normal harmonic balance simulation, and it is based on fitting polynomial models for all nonlinear I-V and Q-V sources of the device, and using these to calculate the various contributions of IM3 distortion. The technique is used to analyze a 2 GHz InGa pHBT power amplifier that shows strong bandwidth dependent signal-induced bias shift

Keywords

III-V semiconductors; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; microwave power amplifiers; 2 GHz; HBT PA; IMD; InP; RF power amplifier; VBIC Model; Volterra analysis; charge models; distortion analysis; fitting polynomial; harmonic balance simulation; multidimensional current; polynomial device model; signal induced bias shift; Bandwidth; Circuit simulation; Harmonic analysis; Harmonic distortion; Heterojunction bipolar transistors; Impedance; Integrated circuit modeling; Polynomials; Radio frequency; Voltage control; Distortion analysis; RF power amplifier; Volterra analysis; harmonic-balance; polynomial device model;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282678

Filename

4057672