A 3-10GHz Broadband CMOS T/R Switch for UWB Applications

Author

Pao, K.-H. ; Hsu, C.-Y. ; Chuang, H.-R. ; Lu, C.-L. ; Chen, C.-Y.

Author_Institution

Inst. of Comput. & Commun. Eng., National Cheng Kung Univ., Tainan

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

452

Lastpage

455

Abstract

A 3-10 GHz broadband CMOS T/R switch for ultra-wideband (UWB) transceiver is presented. The broadband CMOS T/R switch is fabricated based on the 0.18 mu 1P6M standard CMOS process. On-chip measurement of the CMOS T/R switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1plusmn1.3dB. The return losses at both input and output terminals are higher than 14 dB. It is also characterized with 25-34dB isolation and 18-20 dBm input P_1dB. The broadband CMOS T/R switch shows highly linear phase and group delay of 20plusmn10 ps from 10MHz to 15GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications

Keywords

CMOS integrated circuits; microwave switches; transceivers; ultra wideband communication; 0.01 to 15 GHz; 0.18 micron; 1P6M standard CMOS process; CMOS RFIC; SPDT switch; broadband CMOS T/R switch; insertion loss; on-chip measurement; on-chip transceivers; return loss; transmit/receive switch; ultra wideband applications; ultra-wideband communications; ultra-wideband transceiver; CMOS process; CMOS technology; Communication switching; Delay; Gallium arsenide; Insertion loss; Integrated circuit technology; Radio frequency; Switches; Transceivers; CMOS switch; SPDT switch; transmit/receive (T/R) switch; ultra-wideband (UWB) communications;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282680

Filename

4057674