The growth behavior of Pb-containing perovskite thin films using pulsed laser deposition technique

Author

Lin, I-Nan ; Liu, Kuo-Shung ; Tu, Shun-Lih ; Yang, Sheng-Jenn

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1991

fDate

33457

Firstpage

491

Lastpage

494

Abstract

The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO₃-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around _εr=490 for PLZT/STO/Si films deposited at 550°C (1 mbar Po₂) and post-annealed at 550°C (1 atm Po₂). Furthermore, the corresponding charge storage density is around Q_c≈1.5 μc/cm², at 50 KV/cm applied field strength

Keywords

ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; piezoceramics; pulsed laser deposition; 1 atm; 1 mbar; 550 degC; PLZT; PbLaZrO3TiO3; SrTiO₃-Si; SrTiO₃-buffered Si substrates; charge storage density; cluster adherence; dielectric constant; ferroelectric films; highly textured films; perovskite thin films; phase transformation; pulsed laser deposition; Buffer layers; Laser theory; Lead; Optical pulses; Piezoelectric films; Pulsed laser deposition; Semiconductor films; Silicon; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Conference_Location

University Park, PA

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522411

Filename

522411