Ultra-Wideband Shielded Vertical Via Transitions from DC up to the V-Band

This paper presents three shielded vertical via transition designs applicable in millimeter-wave module packaging from DC up to the F-band. The optimized transition structures were fabricated using a standard low-temperature co-fired ceramic (LTCC) process. The measured scattering parameter results of the back-to-back via transition structures showed an exceptionally wide bandwidth with return losses better than 18 dB up to 50 GHz. The extracted insertion loss values of the single transitions were less than about 0.4 dB at 50 GHz. Moreover, full-wave electromagnetic (EM) simulations demonstrated the high potential of two of these via transitions up to 70 GHz