Title :
Ka band Gunn diode amplifier
Author :
Elad, D. ; Nahoum, A.
Author_Institution :
RAFAEL, Haifa, Israel
Abstract :
The authors show how small-signal gain better than 7 dB can be achieved in this band with a negative-resistance Gunn amplifier. Good correlation between design and realisation is reported
Keywords :
Gunn diodes; equivalent circuits; microwave amplifiers; negative resistance; packaging; semiconductor device models; 7 dB; EHF; Ka band; MM-wave; design; negative-resistance Gunn amplifier; small-signal gain; Bandwidth; Conductivity; Diodes; Electronics packaging; Equivalent circuits; Gallium arsenide; Gunn devices; Impedance matching; Inductors; Solid state circuits;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location :
Tel Aviv
Print_ISBN :
0-87942-678-0
DOI :
10.1109/EEIS.1991.217691
