DocumentCode
3158818
Title
1/f noise reduction by interfering with the self correlation of the physical noisy process
Author
Bloom, I. ; Nemirovsky, Y.
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
1991
fDate
5-7 Mar 1991
Firstpage
69
Lastpage
72
Abstract
A new experimental setup for the study of 1/f noise of MOS transistor under nonsteady state condition is presented. The noise measurements demonstrate that by interfering with the self correlation time of the physical process that produces the 1/f noise, the noise power is reduced
Keywords
insulated gate field effect transistors; interference suppression; semiconductor device noise; 1/f noise reduction; MOS transistor; experimental setup; noise measurements; noise power reduction; nonsteady state condition; physical noisy process; self-correlation destruction; Electron traps; Frequency; MOSFET circuits; Noise generators; Noise measurement; Noise reduction; Semiconductor device noise; Semiconductor films; Steady-state; Telegraphy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location
Tel Aviv
Print_ISBN
0-87942-678-0
Type
conf
DOI
10.1109/EEIS.1991.217710
Filename
217710
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