Title :
Electromigration wafer level reliability test and analysis methodology
Author :
Weis, E.A. ; Kinsbron, E. ; Chanoch, G. ; Snyder, M.M. ; Vogel, B. ; Croitoru, N.
Author_Institution :
Fac. of Eng., Tel-Aviv Univ., Ramat-Aviv, Israel
Abstract :
As an outcome of the advances in integrated circuit fabrication technology, electromigration has become a major reliability concern in silicon VLSI circuits. This paper presents an innovative testing and analysis approach, that has been implemented, and allows a substantial reduction in the electromigration test times of VLSI metal thin film
Keywords :
VLSI; electromigration; life testing; materials testing; metallisation; reliability; Al metallisation; Si circuits; VLSI; analysis approach; analysis methodology; electromigration test times; innovative testing; metal thin film; reliability concern; wafer level reliability test; Aluminum; Circuit testing; Conducting materials; Conductive films; Conductivity; Copper; Electromigration; Electrons; Failure analysis; Silicon;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of
Conference_Location :
Tel Aviv
Print_ISBN :
0-87942-678-0
DOI :
10.1109/EEIS.1991.217713
