Modelling of trapping mechanism in MEMS switches

Author

Dekate, Kunal N. ; Gupta, Anju ; Pande, Rajesh S.

Author_Institution

Dept. of Electron. (VLSI), Shri. Ramdeobaba Kamla Nehru Eng. Coll., Nagpur, India

fYear

2010

fDate

17-19 Sept. 2010

Firstpage

621

Lastpage

625

Abstract

Micro-electromechanical System (MEMS) is a batch fabricated (micro-fabricated) system that contains both electrical and mechanical components. The devices are known to be unstable in there performances due to reliability concerns, trapping mechanism in dielectric is one of the major cause for the reliability issue, modelling of these traps can help to improve stiction occurring in dielectric. With the help of first order kinetic equation it can be possible to determine number of traps. A Model is constructed to predict the amount of charge trapped into the silicon nitride (Si3N4) of the capacitive MEMS Switch.

Keywords

microswitches; silicon compounds; SiN; batch fabricated system; capacitive MEMS switches; electrical components; first order kinetic equation; mechanical components; microelectromechanical system; trapping mechanism modelling; Dielectrics; Electron traps; Equations; Mathematical model; Micromechanical devices; Switches; Centroid; MEMS; MIM; Silicon Nitride (Si3N4); Switch; dielectric; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Technology (ICCCT), 2010 International Conference on

Conference_Location

Allahabad, Uttar Pradesh

Print_ISBN

978-1-4244-9033-2

Type

conf

DOI

10.1109/ICCCT.2010.5640453

Filename

5640453