Title :
Microwave p-i-n diodes and switches based on 4H-SiC
Author :
Zekentes, Konstantinos ; Camara, Nicolas ; Konstantinidis, George ; Romanov, Leonid P. ; Kirillov, Aleksey V. ; Boltovets, Mykola S.
Author_Institution :
MRG, Found. for Res. & Technol.-Hellas, Crete
Abstract :
4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and 150 mum, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 Omega, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, are demonstrated for the first time. The switches exhibited insertion loss as low as 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns
Keywords :
microwave diodes; microwave switches; p-i-n diodes; silicon compounds; wide band gap semiconductors; 100 V; 100 mA; 1100 V; 15 to 27 ns; 2.2 kW; 4H-SiC; SiC; carrier effective lifetime; differential resistance; insertion loss; isolation; microwave modulators; microwave p-i-n diodes; microwave switches; punchthrough voltage; Dielectrics; Fabrication; Gallium arsenide; P-i-n diodes; Packaging; Power semiconductor switches; Semiconductor diodes; Silicon carbide; Temperature; Voltage; Microwave modulators; insertion loss; isolation; p-i-n diode; silicon carbide; switches;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281209
