DocumentCode :
3159740
Title :
13% Silicon FilmTM solar cells on low-cost barrier-coated substrates
Author :
Ingram, A.E. ; Barnett, A.M. ; Cotter, J.E. ; Ford, O.H. ; Hall, R.B. ; Rand, J.A. ; Thomas, C.J.
Author_Institution :
AstroPower Inc., Newark, DE, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
477
Lastpage :
480
Abstract :
Thin-film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using the Silicon FilmTM process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 μm when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46 cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this paper
Keywords :
carrier lifetime; elemental semiconductors; getters; minority carriers; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 13.8 percent; 250 mum; Si; Silicon FilmTM process; barrier-coated substrates; barrier/substrate combination; external phosphorous gettering; minority carrier diffusion length; photo-induced degradation; polycrystalline Si thin-film solar cells; Absorption; Costs; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Semiconductor films; Semiconductor thin films; Silicon; Solar power generation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564047
Filename :
564047
Link To Document :
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