• DocumentCode
    3159740
  • Title

    13% Silicon FilmTM solar cells on low-cost barrier-coated substrates

  • Author

    Ingram, A.E. ; Barnett, A.M. ; Cotter, J.E. ; Ford, O.H. ; Hall, R.B. ; Rand, J.A. ; Thomas, C.J.

  • Author_Institution
    AstroPower Inc., Newark, DE, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    477
  • Lastpage
    480
  • Abstract
    Thin-film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using the Silicon FilmTM process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 μm when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46 cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this paper
  • Keywords
    carrier lifetime; elemental semiconductors; getters; minority carriers; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 13.8 percent; 250 mum; Si; Silicon FilmTM process; barrier-coated substrates; barrier/substrate combination; external phosphorous gettering; minority carrier diffusion length; photo-induced degradation; polycrystalline Si thin-film solar cells; Absorption; Costs; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Semiconductor films; Semiconductor thin films; Silicon; Solar power generation; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564047
  • Filename
    564047