Optimization of PHEMT geometry for power applications

Impact ionization is generally taken as a phenomenon, responsible for breakdown in Pseudomorphic High Electron Mobility Transistor (PHEMT). Tuning and modeling the impact ionization phenomenon in PHEMT as a function of device design parameters can serve an effective optimization vehicle for the device manufacturer. The aims of this work are: a) developing a methodology for measuring and modeling impact ionization phenomena in PHEMT, b) developing an empirical model relating the device design parameters to impact ionization, using the methodology above.