Title :
Effect of ultrasound treatment on photoluminescence and stability of porous silicon
Author :
Stolysrova, S. ; El-Bahar, A. ; Chack, A. ; Orekhovsky, V. ; Weil, R. ; Beserman, R. ; Nemirovsky, Y.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
In this paper we propose a new method for porous silicon (PS) surface passivation using ultrasound treatment. This technique is supposed to stabilize the PS properties by ultrasound stimulation of dangling bonds, reconstruction and repopulating of traps in the PS skeleton, similarly to the action of ultrasound on polysilicon and amorphous silicon.
Keywords :
dangling bonds; elemental semiconductors; passivation; photoluminescence; porous semiconductors; silicon; ultrasonic effects; Si; dangling bond; photoluminescence; porous silicon; stability; surface passivation; ultrasound treatment; Aging; Frequency; Oxidation; Passivation; Photoluminescence; Silicon; Stability; Temperature; Ultrasonic imaging; Ultrasonic variables measurement;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 2002. The 22nd Convention of
Print_ISBN :
0-7803-7693-5
DOI :
10.1109/EEEI.2002.1178324
