DocumentCode
3159794
Title
Effect of ultrasound treatment on photoluminescence and stability of porous silicon
Author
Stolysrova, S. ; El-Bahar, A. ; Chack, A. ; Orekhovsky, V. ; Weil, R. ; Beserman, R. ; Nemirovsky, Y.
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
2002
fDate
1 Dec. 2002
Firstpage
63
Lastpage
65
Abstract
In this paper we propose a new method for porous silicon (PS) surface passivation using ultrasound treatment. This technique is supposed to stabilize the PS properties by ultrasound stimulation of dangling bonds, reconstruction and repopulating of traps in the PS skeleton, similarly to the action of ultrasound on polysilicon and amorphous silicon.
Keywords
dangling bonds; elemental semiconductors; passivation; photoluminescence; porous semiconductors; silicon; ultrasonic effects; Si; dangling bond; photoluminescence; porous silicon; stability; surface passivation; ultrasound treatment; Aging; Frequency; Oxidation; Passivation; Photoluminescence; Silicon; Stability; Temperature; Ultrasonic imaging; Ultrasonic variables measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineers in Israel, 2002. The 22nd Convention of
Print_ISBN
0-7803-7693-5
Type
conf
DOI
10.1109/EEEI.2002.1178324
Filename
1178324
Link To Document