Varactor tunned high-Q aictive inductor with broadband tuning range

Author

Song, Kyungju ; Jeong, Yongchae ; Choi, Heungjae

Author_Institution

Dept. of Inf. & Commun. Eng., Chonbuk Nat. Univ., Jeonju

Volume

03

fYear

2008

fDate

24-25 Nov. 2008

Abstract

This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.

Keywords

CMOS integrated circuits; Q-factor; inductors; varactors; CMOS technology; MOS varactor; feedback parallel resonance circuit; high-Q active inductor; size 0.18 mum; tunable LC resonance circuit; Active inductors; CMOS technology; Circuit optimization; Feedback circuits; Q factor; RLC circuits; Resonance; Spirals; Tunable circuits and devices; Varactors; Active inductor; Q-factor; feedback parallel resonance circuit; spiral inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference, 2008. ISOCC '08. International

Conference_Location

Busan

Print_ISBN

978-1-4244-2598-3

Electronic_ISBN

978-1-4244-2599-0

Type

conf

DOI

10.1109/SOCDC.2008.4815740

Filename

4815740