Improved current collapse in AlGaN/GaN HEMTs with 3-dimensional field plate structure

Author

Suzuki, A. ; Akira, K. ; Asubar, J.T. ; Tokuda, H. ; Kuzuhara, M.

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

36

Lastpage

37

Abstract

This paper describes significantly suppressed current collapse in AlGaN/GaN HEMTs with a 3-dimensional field plate (3DFP) structure. 3DFP consists of a gate field plate deposited on a passivated SiN film and equally-spaced multiple grooves formed by dry-etching of AlGaN/GaN layers, and hence the effective field plate area has been efficiently increased. Optimizing the groove spacing of 3DFP, the device showed almost current collapse-free operation without sacrificing the drain current reduction.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; passivation; wide band gap semiconductors; 3-dimensional field plate structure; AlGaN-GaN; HEMT; current collapse; dry-etching; equally-spaced multiple grooves; gate field plate; passivated film; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon compounds; Wide band gap semiconductors; AlGaN/GaN HEMT; Current Collapse; Field plate;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158537

Filename

7158537