Title :
High Efficiency LDMOS Current Mode Class-D Power amplifier at 1 GHz
Author :
Nemati, Hossein Mashad ; Fager, Christian ; Zirath, Herbert
Author_Institution :
Dept. of Micro Technol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
A high power, high efficiency current mode class-D (CMCD) power amplifier (PA) is designed, implemented, and characterized based on LDMOS transistors. A drain efficiency of 71% was achieved with an output power of 20.3 W and a gain of 15.1 dB at 1 GHz. To our knowledge, this result represents the highest efficiency for the CMCD PAs based on LDMOS and the highest gain for all switching mode PAs that have been reported for high power applications (output power of more than 7 W), at frequencies above 800 MHz. Moreover, a wide-band lumped-component balun has been used for the CMCD PA which enables significant size reduction of this class of PA for L-band applications
Keywords :
CMOS analogue integrated circuits; MOSFET; UHF power amplifiers; current-mode circuits; 1 GHz; 15.1 dB; 20.3 W; 71 percent; LDMOS transistors; high efficiency LDMOS current mode class-D power amplifier; switching mode power amplifiers; wide-band lumped-component balun; Capacitance; High power amplifiers; Impedance matching; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Thermal stresses; Wideband; Zero voltage switching; LDMOS; Switching mode power amplifiers; current mode class-D;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281247
