DocumentCode :
3159927
Title :
A potentiometric glucose sensing by an enzyme-modified Ta2O5/ZnO/Zn0.6Mg0.4O solution-gate field-effect transistor
Author :
Iketani, Ken ; Koike, Kazuto ; Hirofuji, Yuichi ; Maemoto, Toshihiko ; Sasa, Shigehiko ; Yano, Mitsuaki
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Omiya, Japan
fYear :
2015
fDate :
4-5 June 2015
Firstpage :
40
Lastpage :
41
Abstract :
Growth of a sputtered Ta2O5/ZnO/Zn0.6Mg0.4O film on a glass substrate and its application to an enzyme-modified field-effect transistor (EnFET) for glucose sensing are reported. This potentiometric glucose sensor showed a stable sensitivity to a wide range of glucose in an electrolyte solution with a detection response time constant of 3 s.
Keywords :
II-VI semiconductors; biosensors; blood; enzymes; field effect transistors; semiconductor thin films; sputter deposition; sugar; tantalum compounds; thin film sensors; thin film transistors; wide band gap semiconductors; zinc compounds; EnFET; Ta2O5-ZnO-Zn0.6Mg0.4O; detection response time constant; electrolyte solution; enzyme-modified Ta2O5-ZnO-Zn0.6Mg0.4O solution-gate field-effect transistor; glass substrate; potentiometric glucose sensing; sputtered film; time 3 s; Films; II-VI semiconductor materials; Logic gates; Substrates; Sugar; Transistors; Zinc oxide; EnFET; Glucose sensor; ZnO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-8614-9
Type :
conf
DOI :
10.1109/IMFEDK.2015.7158539
Filename :
7158539
Link To Document :
بازگشت