Title :
In-situ control in zone-melting recrystallization process for formation of high-quality thin film polycrystalline Si
Author :
Kawama, Y. ; Takami, A. ; Naomoto, H. ; Hamamoto, S. ; Ishihara, Takuya
Author_Institution :
Photovoltaic Devices Technol. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Newly developed zone-melting recrystallization (ZMR) apparatus for formation of thin film polycrystalline Si is introduced. In ZMR method, the fine temperature control is required for formation of high quality crystal over the large area with high uniformity. Therefore, monitoring of melting zone by means of CCD camera was employed. In this system, the width of melting zone was kept constant by controlling the output power of melting heater based on monitoring CCD-image. Reliability of this controlling system was confirmed by evaluating the quality of ZMR-Si by changing scanning speed and output power of melting heater which corresponds to the width of melting zone. As a result, {100} oriented thin film polycrystalline Si (0.3-3 μm thick) with low dislocation density of 2-3×106 cm-2 was successfully obtained all over 6" φ substrate
Keywords :
elemental semiconductors; recrystallisation; semiconductor growth; semiconductor thin films; silicon; temperature control; zone melting; zone melting recrystallisation; 0.3 to 3.0 mum; Si; fine temperature control; high-quality thin film polycrystalline Si; melting heater; output power; scanning speed; zone-melting recrystallization process; Charge coupled devices; Charge-coupled image sensors; Monitoring; Power generation; Process control; Semiconductor thin films; Substrates; Temperature control; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564048
