Title :
Electrode stress effects on electrical properties of PZT thin film capacitors
Author :
Chung, Ilsub ; Yoo, I.K. ; Lee, W. ; Chung, C.W. ; Lee, J.K. ; Desu, Seshu B.
Author_Institution :
Samsung Adv. Inst. of Technol., Kyungki, South Korea
Abstract :
It is well known that electrode/PZT interface affects the electrical properties of PZT thin film capacitors. Electrode stress is one of the key parameters which determine the interface characteristics. Here we report the effects of bottom electrode stress on the properties of Pt/PZT/Pt capacitors. PZT films were deposited by MOD method on Pt/Ti/SiO2/Si substrates with various bottom electrode stresses. Structural and compositional analyses were made by TEM/TED, XTEM, XRD. Stress variations due to subsequent processing steps were measured by using laser deflection method. Finally, electrical properties were evaluated by testing hysteretic properties, fatigue, and leakage current. Guidelines for reliability improvement of PZT thin film capacitors can be made by correlating the above results
Keywords :
X-ray diffraction; dielectric hysteresis; dielectric losses; fatigue; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; lead compounds; leakage currents; piezoceramics; piezoelectric thin films; piezoelectricity; platinum; thin film capacitors; transmission electron microscopy; PZT thin film capacitors; PZT-Pt; PbZrO3TiO3-Pt; Pt-Ti-SiO2-Si; Pt/PZT/Pt capacitors; Pt/Ti/SiO2/Si substrates; TEM/TED; XRD; XTEM; bottom electrode stress; electrical properties; electrode stress effects; electrode/PZT interface; fatigue; hysteretic properties; interface characteristics; laser deflection method; leakage current; Capacitors; Electrodes; Fatigue; Hysteresis; Semiconductor films; Stress measurement; Substrates; Testing; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522421
