Basic properties of resistive memory diode composed of BaTiO3 ferroelectric thin film by MOD process

Author

Sugie, Toshiyuki ; Hashimoto, Shuhei ; Ziyang Zhang ; Yamashita, Kaoru ; Noda, Minoru

Author_Institution

Grad. Sch. Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

96

Lastpage

97

Abstract

Metal Organic Decomposition(MOD)-made BaTiO₃ thin films were newly examined whether a ferroelectric resistive switching is available in the film by investigating the relation between current conduction and ferroelectricity and the behaviors of resistive hysteresis. BaTiO₃ thin film annealed at 850°C shows remanent polarization of about 4 μC/cm² and coercive field of about 110 kV/cm. The resistive hysteresis showed a bipolar switching with on/off ratio of 1-5 orders of magnitude. Finally, we consider that the ferroelectric polarization contributes in some ways to change the band profile at Metal-Ferroelectric interface.

Keywords

annealing; barium compounds; ferroelectric coercive field; ferroelectric thin films; resistive RAM; semiconductor diodes; BaTiO₃; MOD process; bipolar switching; coercive field; current conduction; ferroelectric polarization; ferroelectric resistive switching; ferroelectric thin film; metal organic decomposition; metal-ferroelectric interface; remanent polarization; resistive hysteresis; resistive memory diode; temperature 850 degC; thin film annealing; Annealing; Electric fields; Films; Hysteresis; Metals; Switches; Temperature measurement; BaTiO3; Metal Organic Decomposition (MOD); ferroelectric; resistive hysteresis;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158567

Filename

7158567