A comprehensive system for submicron-device simulation

Author

Rudan, Massimo ; Lorenzini, Martino ; Vecchi, Maria Cristina ; Reggiani, Susanna

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

41

Abstract

We present here a comprehensive system for submicron-device simulation based on the hydrodynamic (HD) model and the expansion of the Boltzmann equation (BTE) in spherical harmonics (SHE). In the typical operating regime of semiconductor devices, the accurate calculation of the carrier concentration and velocity, along with the information about the carrier temperature, provided by the HD model, is important for describing a number of phenomena indicated by the general term hot-carrier effects, which play a relevant role in modern devices. The coefficients of the model are computed by adopting the solution method for the BTE based on the SHE, and using the full-band structure for both the electron and valence band of silicon. The dependence of the coefficients on lattice temperature has been investigated and compared with available experimental data

Keywords

Boltzmann equation; carrier density; carrier mobility; digital simulation; electronic engineering computing; hot carriers; semiconductor device models; Boltzmann equation expansion; HFIELDS-3D; carrier concentration; carrier temperature; carrier velocity; full-band structure; hot-carrier effects; hydrodynamic model; lattice temperature; semiconductor devices; spherical harmonics; submicron-device simulation; Brillouin scattering; Electrons; Equations; Hydrodynamics; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625177

Filename

625177