• DocumentCode
    316053
  • Title

    A linear model application for the design of transparent conductive In2O3 coatings

  • Author

    Golan, G. ; Axelevitch, A. ; Rabinovitch, E.

  • Author_Institution
    Fac. of Electr. Eng., Center for Technol. Educ., Holon, Israel
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    83
  • Abstract
    Highly conductive transparent indium oxide (In2O3 ) thin films were prepared by DC magnetron sputtering using pure indium oxide targets. Sputtering was done in a pure Argon (Ar) atmosphere. A linear programming method for the design and optimization of the technological process development was used. The physical model of the sputtering process was based on random sections in of the parameter´s space. The obtained processing model was optimized by the “steep rise” method, using the mathematical model gradient to obtain optimal processing parameters. The active independent factors of the sputtering process were as follows: 1. Ar pressure during the process; 2. substrate temperature; 3. target voltage; and 4. deposition period. As a result of the optimization process, the transparent conductive indium oxide thin films had the following parameters: transparency in 550 nm wavelength -90.7% (including the glass substrate having an absolute transparency of 91.08%); and resistivity of up to 0.043 Ω.cm for a 2525 Å film thickness. Finally, the linear model method for the design and optimization of this multi-parameters physical process was found to be a useful technique
  • Keywords
    electrical resistivity; indium compounds; linear programming; semiconductor materials; semiconductor thin films; sputter deposition; sputtered coatings; transparency; 0.043 ohmcm; 2525 A; 550 nm; Ar; Ar pressure; DC magnetron sputtering; In2O3; In2O3 thin films; deposition period; linear model application; linear programming method; mathematical model gradient; multi-parameters physical process; optimal processing parameters; optimization; physical model; pure Ar atmosphere; pure indium oxide target; resistivity; sputtering process; steep rise method; substrate temperature; target voltage; technological process development; transparent conductive In2O3 coatings; Argon; Atmospheric modeling; Conductive films; Design methodology; Design optimization; Indium; Mathematical model; Space technology; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625186
  • Filename
    625186