Title :
A study of the electrical properties of ion implanted MnNiCuFeO ceramics
Author :
Li, Binbin ; Dias, José Antonio Siqueira
Author_Institution :
Dept. of Electron. & Microeelectron., Campinas Univ., Brazil
Abstract :
The structural and electrical properties of polycrystalline MnNiCuFeO implanted with B+, P+, and Si+ were studied. Measurements were realized using several techniques: scanning electron microscope, microprobe, low frequency impedance analyzer, and spreading resistance probe. Results from the spreading resistance measurements show that the resistance of the implanted samples is approximately half that of non-implanted samples. The impedance analyzer measurements indicate that the ratio of the real part (grain effect) to the imaginary part of the impedance (grain boundary effect) decreases after ion implantation. These results show that the resistance of the grain boundary is much higher than that of the grain itself and that the grain boundary behavior is very important in relation to the bulk properties of polycrystalline MnNiCuFeO ceramics
Keywords :
boron; ceramics; copper compounds; electric impedance; electron probe analysis; grain boundary diffusion; grain boundary segregation; heavily doped semiconductors; ion implantation; iron compounds; manganese compounds; nickel compounds; phosphorus; scanning electron microscopy; semiconductor materials; silicon; MnNiCuFeO:B,P,Si; grain boundary effect; grain effect; ion implantation; low frequency impedance analyzer; microprobe; polycrystalline semiconducting ceramics; scanning electron microscope; spreading resistance probe; Ceramics; Electric resistance; Electrical resistance measurement; Frequency measurement; Grain boundaries; Image analysis; Impedance measurement; Ion implantation; Probes; Scanning electron microscopy;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625194
