• DocumentCode
    316062
  • Title

    Visible hot electron electroluminescence from Si in tunnel MIS junction

  • Author

    Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    165
  • Abstract
    Light emission from Si in tunnel MIS structure has been investigated. Monoenergetic hot electrons which are capable of photon emission may appear in Si due to direct tunneling from the metal under high insulator bias conditions. The electroluminescence spectra measured in tunnel MIS structures are discussed
  • Keywords
    MIS structures; MOSFET; aluminium; electroluminescence; elemental semiconductors; hot carriers; silicon; silicon compounds; tunnelling; Al-SiO2-Si; direct tunneling; insulator bias conditions; monoenergetic hot electrons; photon emission; tunnel MIS junction; visible electroluminescence spectra; Current density; Current measurement; Current-voltage characteristics; Density measurement; Electrons; Insulation; Ionization; MOSFETs; Optical scattering; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625206
  • Filename
    625206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=316062