Title :
A proposed velocity-electric field relationship for modeling compound semiconductor devices
Author :
Chakrabarti, P. ; Madheswaran, M.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
This paper proposes a new empirical relationship between the electron mobility and the applied electric field for compound semiconductors over the entire region including the negative differential mobility region. It ensures continuity and smoothness of v-E curve over the entire region which helps the convergence behavior in numerical simulation of compound semiconductor devices. The proposed approximation is in good agreement with reported experimental results and Monte-Carlo simulation results
Keywords :
Monte Carlo methods; electric fields; electron mobility; semiconductor device models; Monte-Carlo simulation; applied electric field; compound semiconductor device modelling; convergence behavior; electron mobility; negative differential mobility region; numerical simulation; v-E curve; velocity-electric field relationship; Analytical models; Boundary conditions; Circuit analysis; Circuit simulation; Differential equations; Gallium arsenide; Gunn devices; Predictive models; Semiconductor devices; Very large scale integration;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625208
